Two different methods to receive 3D images in conventional 2D holograms in view of their applications with currently used materials are discussed. For optical and E-Beam registration of 3D holograms, three types of organic and inorganic resists were used. Their resolution capability and exposure sensitivity were analyzed with respect to 3D hologram registration in structures with complex diffractive optical variable elements.
A key problem for recording digital 3D holograms is the registration of high (more that 2500 lines per mm) spatial frequencies of synthesized interferogram on to the recording medium. Most of the existing organic and inorganic resists have a substantial reduction of the gain-frequency characteristic in areas of frequencies that have more than 3–4 thousand lines per millimeter, and therefore need extra correction depending on the type of resist.
Based on early research of organic and inorganic resists and a series of trial recordings, three widely used resists were chosen with the intention of carrying out detailed comparative analysis, testing their efficiency for e-beam recording of holograms with 3D CGH elements.
In this research two organic PMMA resists were studied, Shipley 1800 (c) Series and electronic resist “EPR-40”, and one inorganic semiconductor chalcogenide resist As40S60−x Sex (where x = 0, 10, 20, 30, 40).
